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Autocatalytic Coatings & Technology |
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Stapleton Technologies Inc. |
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MICRO Sequences |
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Hydrogen |
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Cobalt-Nickel deposited into MOS Silicon for subsequent silicide formation to form the drain on discrete devices |
Palladium Activation of Silicon for Ohmic contact |
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This process is a portion of a complete process that deposits a thin layer of cobalt-nickel onto the silicon, thermal anneal to form silicide in forming gas and then the deposition of nickel and gold to form the solderable surface. This technology permits the manufacture of a number of different types of CMOS devices using low cost aqueous techniques to develop metalize the wafers with silicide Ohmic contacts, eliminating aluminum and the vacuum requirements of conventional processing. |
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Nickel gold deposit after silicide formation on bare silicon. |
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To contact us: |
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Sequence 1042-1043 |
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Process Materials |
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Process |
Description |
Technical Data Sheet |
Material Safety Data Sheet |
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MICRO 209 |
Cleaner, TMAH |
MICRO 209 DS |
MICRO 209 MSDS |
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MICRO 210 |
Cleaner, Organic Acid |
MICRO 210 DS |
MICRO 210 MSDS |
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MICRO 212 |
Cleaner, Organic Acid + HF |
MICRO 212 DS |
MICRO 212 MSDS |
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MICRO 214 |
Palladium Activation |
MICRO 214 DS |
MICRO 214 MSDS |
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MICRO 275 |
Autocatalytic Cobalt-Nickel |
MICRO 275 DS |
MICRO 275 MSDS |
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MICRO 282 |
Autocatalytic Nickel |
MICRO 282 DS |
MICRO 282 MSDS |
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MICRO 290 |
Immersion Gold |
MICRO 290 DS |
MICRO 290 MSDS |
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MICRO 291 |
Hybrid Autocatalytic Gold |
MICRO 291 DS |
MICRO 291 MSDS |